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| SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE - PARTMARKING DETAIL - 7 FCX593 N93 FCX493 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MIN. 120 100 5 100 100 100 0.3 0.6 1.15 1.0 100 100 60 20 150 10 MAX. VALUE 120 100 5 1 2 200 1 -65 to +150 UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE UNIT V V V nA nA nA V V V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VCES=100V VEB=4V IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=1A, VCE=10V IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 300 Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical Characteristics graphs see FMMT493 datasheet. 3 - 88 |
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